stt253gkxxbt thyristor-thyristor modules type stt253gk08bt STT253GK12BT stt253gk14bt stt253gk16bt stt253gk18bt stt253gk20bt stt253gk22bt v rrm v drm v 800 1200 1400 1600 1800 2000 2200 v rsm v dsm v 900 1300 1500 1700 1900 2100 2300 symbol test conditions maximum ratings unit t vj =t vjm t c =85 o c; 180 o sine 400 253 a t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 9000 9500 8000 8500 a i tsm , i fsm t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 405000 336000 320000 240000 a 2 s i 2 dt (di/dt) cr 250 800 a/us (dv/dt) cr t vj =t vjm ; v dr =2/3v drm r gk = ; method 1 (linear voltage rise) 1000 v/us p gm t vj =t vjm t p =30us i t =i tavm t p =500us 120 60 w p gav 20 w i trms , i frms i tavm , i favm o c t vj t vjm t stg -40...+130 130 -40...+130 v isol 50/60hz, rms t=1min i isol <1ma t=1s 3000 3600 v~ m d mounting torque (m5) terminal connection torque (m8) _ 2.5-5/22-44 12-15/106-132 nm/lb.in. weight 600 g t vj =t vjm repetitive, i t =750a f=50hz, t p =200us v d =2/3v drm i g =1a non repetitive, i t =250a di g /dt=1a/us v rgm 10 v typical including screws dimensions in mm (1mm=0.0394") p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
stt253gkxxbt thyristor-thyristor modules symbol test conditions characteristic values unit i rrm t vj =t vjm ; v r =v rrm 50 ma features * international standard package * isolation voltage 3600 v~ advantages * space and weight savings * simple mounting * improved temperature and power cycling * reduced protection circuits applications * motor control * power converter * heat and temperature control for industrial furnaces and chemical processes * lighting control * contactless switches ma i drm 50 v v t , v f i t , i f =750a; t vj =25 o c 1.6 v to for power-loss calculations only (t vj =130 o c) 0.925 v r t 0.45 m v d =6v; t vj =25 o c t vj =-40 o c v gt 3 4 v v d =6v; t vj =25 o c t vj =-40 o c i gt 200 250 ma v gd t vj =t vjm ; v d =2/3v drm 0.25 v i gd 10 ma i h t vj =25 o c; v d =6v; r gk = 200 ma t vj =25 o c; t p =30us; v d =6v i g =0.45a; di g /dt=0.45a/us 300 ma i l per thyristor/thyristor; dc current per module r thjc 0.14 0.07 k/w per thyristor/thyristor; dc current per module r thjk 0.17 0.085 k/w d s creeping distance on surface 12.7 mm d a strike distance through air 9.6 mm a maximum allowable acceleration 50 m/s 2 t vj =25 o c; v d =1/2v drm i g =1a; di g /dt=1a/us t gd 1 us t vj =t vjm ; i t =300a; t p =200us; -di/dt=10a/us v r =100v; dv/dt=50v/us; v d =2/3v drm t q 150 us uc q s t vj =125 o c; i t , i f =400a; -di/dt=50a/us 760 i rm 275 a ; v d =v drm t vj =t vjm t vj =130 o c t vj =t vjm heat transfer through aluminium nitride ceramic isolated metal baseplate * p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
stt253gkxxbt thyristor-thyristor modules fig. 2a maximum forward current at case temperature fig. 3 power dissipation versus on-state current and ambient temperature (per thyristor or diode) fig. 5 three phase rectifier bridge: power dissipation versus direct output current and ambient temperature fig. 1 surge overload current i tsm , i fsm : crest value, t: duration fig. 4 gate trigger characteristics fig. 6 gate trigger delay time fig. 2 i 2 t versus time (1-10 ms) 3xstt253 t c 0 25 50 75 100 125 150 0 100 200 300 400 500 600 a c i tavm i favm 180 sin 120 60 30 dc p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
stt253bt thyristor-thyristor modules fig. 7 three phase ac-controller: power dissipation versus rms output current and ambient temperature 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.00 0.05 0.10 0.15 0.20 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.00 0.05 0.10 0.15 t s z thjk k/w t s z thjc k/w 30 dc 30 dc fig. 8 transient thermal impedance junction to case (per thyristor or diode) fig. 9 transient thermal impedance junction to heatsink (per thyristor or diode) r thjc for various conduction angles d: d r thjc (k/w) dc 0.14 180 o c 0.141 120 o c 0.142 60 o c 0.143 30 o c 0.145 constants for z thjc calculation: i r thi (k/w) t i (s) 1 0.0035 0.099 2 0.0165 0.1 6 8 3 0.1091 0.45 6 r thjk for various conduction angles d: d r thjk (k/w) dc 0.17 180 o c 0.171 120 o c 0.172 60 o c 0.172 30 o c 0.173 constants for z thjk calculation: i r thi (k/w) t i (s) 1 0.0033 0.099 2 0.0159 0.16 8 3 0.1053 0.4 5 6 4 0.14 1.36 3 x stt253 p4 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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